Growth of III-V layers containing arsenic, antimony and phosphor

Details Growth of III-V layers containing arsenic, antimony and phosphor Growth of III-V layers containing arsenic, antimony and phosphor

1977-03-29

1978-02-07

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, H01L 21208

Patent

active

040725448

ABSTRACT:
Gallium arsenide antimonide phosphide (GaAsSbP) has been successfully grown on a gallium arsenide substrate by liquid phase epitaxy. A critical amount of phosphorus initially in growth solution is depleted with consequent grading of lattice constant and bandgap in the epitaxially grown layer. The substrate and graded layer as a subassembly are well suited for use in electronic devices such as double heterostructure lasers, light-emitting diodes, Schottky barrier diodes, and p-n junction photodiodes in the near-infrared low loss region of optical fibers.

REFERENCES:
patent: 3224913 (1965-12-01), Ruehrwein
patent: 3560275 (1971-02-01), Kressel et al.
patent: 3614549 (1971-10-01), Lorenz et al.
patent: 3677836 (1972-07-01), Lorenz
patent: 3696262 (1972-10-01), Antypas
patent: 3721583 (1973-03-01), Blakeslee
patent: 3785885 (1974-01-01), Stone
patent: 3821033 (1974-06-01), Hu
patent: 3852591 (1974-12-01), Lee
patent: 3933538 (1976-01-01), Akai et al.
patent: 3958263 (1976-05-01), Panish et al.

Affiliated with

Also associated with

Rating

Growth of III-V layers containing arsenic, antimony and phosphor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Growth of III-V layers containing arsenic, antimony and phosphor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Growth of III-V layers containing arsenic, antimony and phosphor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1399553