Growth of III-V films by control of MBE growth front stoichiomet

Details Growth of III-V films by control of MBE growth front stoichiomet Growth of III-V films by control of MBE growth front stoichiomet

1990-02-28

1992-03-10

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437105, 437107, 437133, 437936, 437945, 148DIG22, 148DIG25, 148DIG169, H01L 2136, H01L 21363

Patent

active

050949748

ABSTRACT:
For the growth of strain-layer materials and high quality single and multiple quantum wells, the instantaneous control of growth front stoichiometry is critical. The process of the invention adjusts the offset or phase of MBE control shutters to program the instantaneous arrival or flux rate of In and As.sub.4 reactants to grow InAs. The interrupted growth of first In, then As.sub.4, is also a key feature.

REFERENCES:
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4575462 (1986-03-01), Dobson et al.
patent: 4829022 (1989-05-01), Kobayashi et al.
patent: 4833101 (1989-05-01), Fujii
patent: 4843029 (1989-06-01), Joyce et al.
patent: 4933300 (1990-06-01), Koinuma et al.
Pessa et al., "Atomic Layer Epitaxy and . . . of CdTe Films Grounan CdTe . . . ", J. Appl. Phys. 54(10), Oct. 1983, pp. 6047-6050.
Takeda et al., "Atomic-Layer Epitaxy of ZnSe and ZnTe . . . ", Extended Abs. 17th Conf. Solid State Devices & Mat., Tokyo, 1985, pp. 221-224.
Briones et al., "Low-Temperature Growth of AlAs/GaAs Heterostructures by Modulated Molecular Beam Epitaxy", Jpns. J. Appl. Phys., vol. 26, No. 7, Jul. 1987, pp. L1125-L1127.
Sakaki et al., "One Atomic Layer . . . by Insertion of Smoothing Period in Molecular Beam Epitaxy", Jpn. J. Appl. Phys., vol. 24, No. 6, Jun., 1985, pp. L417-L420.

Affiliated with

Also associated with

Rating

Growth of III-V films by control of MBE growth front stoichiomet does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Growth of III-V films by control of MBE growth front stoichiomet, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Growth of III-V films by control of MBE growth front stoichiomet will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2284419