Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2005-05-31
2005-05-31
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S479000, C438S483000
Reexamination Certificate
active
06900067
ABSTRACT:
A method of forming a light emitting device includes providing a sapphire substrate, growing an Al1−xGaxN first layer by vapor deposition on the substrate at a temperature between about 1000° C. and about 1180° C., and growing a III-nitride second layer overlying the first layer. The first layer may have a thickness between about 500 angstroms and about 5000 angstroms. In some embodiments, reaction between the group V precursor and the substrate is reduced by starting with a low molar ratio of group V precursor to group III precursor, then increasing the ratio during growth of the first layer, or by using nitrogen as an ambient gas.
REFERENCES:
patent: 5393993 (1995-02-01), Edmond et al.
patent: 5585648 (1996-12-01), Tischler
patent: 5661074 (1997-08-01), Tischler
patent: 5888886 (1999-03-01), Sverdlov et al.
patent: 5903017 (1999-05-01), Itaya et al.
patent: 5990495 (1999-11-01), Ohba
patent: 5990496 (1999-11-01), Kunisato et al.
patent: 6106898 (2000-08-01), Takamatsu et al.
patent: 6229151 (2001-05-01), Takeuchi et al.
patent: 6303473 (2001-10-01), Heffernan et al.
patent: 6426512 (2002-07-01), Ito et al.
patent: 6440214 (2002-08-01), Hooper et al.
patent: 6440823 (2002-08-01), Vaudo et al.
patent: 6593016 (2003-07-01), Chiyo et al.
patent: 6610551 (2003-08-01), Doverspike et al.
patent: 6683327 (2004-01-01), Krames et al.
patent: 2003/0102482 (2003-06-01), Saxler
patent: 2003/0198837 (2003-10-01), Craven et al.
patent: 2003/0207518 (2003-11-01), Kong et al.
patent: 2004/0113163 (2004-06-01), Steigerwald et al.
patent: 10-27947 (1989-01-01), None
patent: 11-40893 (1989-06-01), None
patent: 11-97803 (1989-08-01), None
patent: 10-270368 (1998-10-01), None
patent: 11-112029 (1999-01-01), None
patent: P2000-40858 (2000-02-01), None
patent: P2000-68498 (2000-03-01), None
patent: P2000-196143 (2000-07-01), None
patent: WO 99/10936 (1999-03-01), None
B. L. Liu et al., “MOCVD Growth of Device-Quality GaN on Sapphire using a Three-Step Approach”, Journal of Crystal Growth 234 (2002), pp. 637-645.
T. Egawa et al., “Demonstration of an InGaN-Based Light-Emitting Diode on an AIN/Sapphire Template by Metalorganic Chemical Vapor Deposition”, Applied Physics Letters, vol. 81, No. 2, Jul. 8, 2002, pp. 292-294.
Yasuo Ohba et al., “Mechanism for Reducing DislocationS at the Initial Stage of GaN Growth on Sapphire Substrates Using High-Temperature-Grown Single-Crystal AIN Buffer Layers”, The Japan Society of Applied Physics, vol. 41, Part 2, No. 6A, Jun. 1, 2002, pp. L615-L618.
P. Kung et al., “High Quality AIN and GaN Epilayers Grown on (00.1) Sapphire, (100), and (111) Silicon Substrates”, Applied Physics Letter, vol. 66, No. 22, May 29, 1995, pp. 2958-2960.
Tomohiko Shibata et al., New Buffer Layer Technique Using Underlying Epitaxial AIN Films for High-Quality GaN Growth, Material Research Society, Symposium Proceedings, vol. 693, 2002, pp. 13.48.1-13.48.5.
A.D. Hanser et al., “SiC Substrates for Growth of GaN and Related Compounds”, The Institution of Electrical Engineers, 1999, pp. 386-390.
Yuichiro Kuga et al., “Violet and Near-UV Light Emission from GaN/Al0.08Ga0.92N Injection Diode Grown on (0001) 6H-SiC Substrate by Low-Pressure Metal-Organic Vapor Phase Epitaxy”, Japanese Journal of Applied Physics, vol. 34, Part 1, No. 8A,. Aug. 1995, pp. 4085-4086.
K. Horino et al., “Initial Growth Stage of AIGaN Grown Directly on (0001) 6H-SiC by MOVPE”, Materials Research Society, Symposium Proceedings, Dec. 2-6, 1996, vol. 449, pp. 73-78.
F. A. Ponce et al., “Microstructure of GaN Epitaxy on SiC Using AIN Buffer Layers”, America Institute of Physics, Appl. Phys. Lett. 67 (3), Jul. 17, 1995, pp. 410-412
J. S. Smart et al., “Single Step Process for Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates”, American Institute of Physics, Appl. Phys. Lett. vol. 75, No. 24, Dec. 13, 1999, pp 3820-3822.
C.F. Lin et al., “Growth and Characterizations of GaN on SiC Substrates with Buffer Layers”, American Institute of Physics, J. Appl. Phys. 82 (5), Sep. 1, 1997, pp 2378-2382.
L.B. Rowland et al., “Aluminum Nitride/Silicon Carbide Multilayer Heterostructure PRoduced by Plasma-Assisted, Gas-Source Molecular Beam Epitaxy”, American Institute of Physics, Appl. Phys. Lett. 62 (25), Jun. 21, 1993, pp 3333-3335.
J.A. Smart et al., “AIGaN/GaN Heterostructures on Insulating AIGaN Nucleation Layers”, American Institute of Physics, Appl. Phys. Lett. vol. 75, No. 3, Jul. 19, 1999, pp 388-390.
T. Warren Weeks, Jr., et al., “GaN Thin Films Deposited via Organometallic Vapor Phase Epitaxy on α(6H)-SiC(0001) Using High-Temperature Monocrystalline AIN Buffer Layers”, American Institute of Physics, Appl. Phys. Lett. (67 (3), Jul. 17, 1995, pp 401-403.
Yasuo Ohba et al., “Growth of High-Quality AIN, GaN and AIGaN with Automatically Smooth Surfaces on Sapphire Substrates”, Japanese Journal of Applied Physics, vol. 36 (1997) Part 2, No. 12A, Dec. 1, 1997, pp L1565-L1567.
S. Yoshida et al., “Improvements on the Electrical and Luminescent Properties of Reactive Molecular Beam Epitaxially Grown GaN Films by Using AIN-Coated Sapphire Substrates ”, Appl. Phys. Lett., vol. 42, No. 5, Mar. 1, 1983, pp 427-429.
Goetz Werner K.
Kobayashi Junko
Leiterman Rachel V.
Lumileds Lighting U.S. LLC
Mulpuri Savitri
Patent Law Group LLP
LandOfFree
Growth of III-nitride films on mismatched substrates without... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Growth of III-nitride films on mismatched substrates without..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Growth of III-nitride films on mismatched substrates without... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3457310