Growth of II VI laser diodes with quantum wells by atomic layer

Details Growth of II VI laser diodes with quantum wells by atomic layer Growth of II VI laser diodes with quantum wells by atomic layer

1993-10-20

1995-03-07

Kunemund, Robert

Fishing, trapping, and vermin destroying

437129, 437133, 117104, 257 15, H01L 21203

Patent

active

053957911

ABSTRACT:
A method for using atomic layer epitaxy (ALE) and/or migration enhanced epitaxy (MEE) to grow high efficiency quantum wells in II-VI laser diodes. The substrate and previously grown layers of the laser diode are heated to a temperature less than or equal to about 200.degree. C. in an MBE chamber. Sources of Cd, Zn, and Se are injected alternately into the chamber to grow a short-period strained-layer superlattice (SPSLS) quantum well layer including overlaying monolayers of Cd, Zn and Se. The quantum well layer is described by the notation [(CdSe).sub.m (ZnSe).sub.n ].sub.p where m, n and p are integers.

REFERENCES:
patent: 4261771 (1981-04-01), Dingle et al.
patent: 5045897 (1991-09-01), Alhgren
patent: 5068867 (1991-11-01), Hasenberg et al.
Journal of Crystal Growth, vol. 101, No. 1/4, Apr. 1, 1990, pp. 81-85.
Journal of Crystal Growth, vol. 117, No. 1/4, Feb. 1992, p. 1077.
Applied Physics Letters, vol. 56, No. 9, Feb. 26, 1990, pp. 848-850.
Applied Physics Letters, vol. 60, No. 17, Apr. 27, 1992, pp. 2045-2047.
"Short Wavelength II-VI Laser Diodes", by Haase et al., Inst. Phys. Conf. Ser. No. 120: Chapter 1, Paper presented at Int. Symp. GaAs and Related Compounds, Seattle, 1991.
"Dynamic Reflection High-Energy Diffraction Observations of the Atomic Layer Epitaxy Growth of Zn Chalcogenides", by Takafumi Yao, Japanese Journal of Applied Physics, vol. 25, No. 12, Dec. 1986.
"Excitonic Trapping From Atomic Layer Epitaxial ZnTe within ZnSe(Zn,Mn)Se Heterostructures", by Kolodziejski et al., American Institute of Physics, Appl. Phys. Lett. 52 (13), 28 Mar. 1988.
"Atomic Layer Epitaxial Growth of ZnSe, ZnTe, and ZnSe-ZnTe Strained-layer Superlattices", by Dosho et al., American Institute of Physics, J. Appl. Phys. 66 (6), 15 Sep. 1989.
Outline entitled "Hot-Exciton Luminescence in ZnSe/CdS3 Digital Alloy Quantum Wells", by A. Pareek et al., Bulletin of the American Physical Society, Mar. 1992, vol. 37, No. 1.
Pessa et al. "Atomic layer Epi and characterization of . . . grown on CdTe (100) substrates" J. Appl. Phys. vol. 54 (10), 1983 p. 6047.
Takeda et al. "Atomic layer Epi of ZnSe and ZnTe single crystal films and its appln to ZnSe/ZnTe superlattices" extended abstracts of 17th Conf. on Solid State Devices and Materials, Tokyo (Japan) 1985, pp. 221-224.

Affiliated with

Also associated with

Rating

Growth of II VI laser diodes with quantum wells by atomic layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Growth of II VI laser diodes with quantum wells by atomic layer , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Growth of II VI laser diodes with quantum wells by atomic layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1405813