Growth of high quality low-loss ferrite materials on wide...

Details Growth of high quality low-loss ferrite materials on wide... Growth of high quality low-loss ferrite materials on wide...

2006-10-04

2011-10-04

Rickman, Holly (Department: 1785)

Stock material or miscellaneous articles

Composite

Of inorganic material

Reexamination Certificate

active

08029921

ABSTRACT:
A semiconductor device including a ferrite layer, a widebandgap semiconductor material layer, and a buffer layer. The buffer layer comprises an interweaving of MgO and BaM. In addition the buffer layer allows a gradual reduction of the interfacial stress, and mediates the strain between a silicon substrate and a ferrite layer of the device. In addition, the buffer layer allows for high crystal alignment resulting in high crystal quality and thereby producing a low microwave loss semiconductor device. The buffer layer also minimizes chemical interdiffusion of atoms between the substrate and the ferrite layer.

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patent: 2004/0165428 (2004-08-01), Odagawa et al.
Chen et al. “Growth of Ba-hexaferrite films on single crystal 6-H SiC.” Journal of Magnetism and Magnetic Materials 301(2005): 166-170.
Oliver et al. “Growth and characterization of thick oriented barium hexaferrite films on MgO (111) substrates.” Applied Physics Letters 76(2000): 3612-3614.
Wang et al. “Microwave and magnetic properties of double-side hexaferrite films on (111) magnesium oxide substrates.” Journal of Applied Physics 92(2002): 6728-6732.
Liu et al. “Barium ferrite (BaFe12019) thin film prepared by pulsed laser deposition on MgO buffered Si substrates.” Applied Physics A: Materials Science & Processing 80(2003): 611-614.

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