Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1985-06-10
1987-04-21
Saba, William G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29576E, 29576B, 148DIG158, 148DIG169, 156612, 427 39, 427 86, 20419225, 2041923, 20419232, H01L 21203, H01L 2126
Patent
active
046594019
ABSTRACT:
A method and apparatus for forming epitaxial thin film layers on substrates having abrupt transitions between layers of different composition or layers of different or like composition with different degrees of doping included therein. Gaseous reactants containing the desired elements to be included in the first film layer are injected into a CVD reaction chamber containing a substrate. The substrate is heated to a temperature high enough to obtain an epitaxial deposit, but low enough so as not to cause decomposition of the reactants. Once the gaseous reactant flows reach steady-state, an electric discharge or plasma is created in the gases to initiate the decomposition reaction and obtain a deposit. In this way, no transient effects are present. Once the deposit has attained sufficient thickness, the electric discharge is turned off to abruptly terminate deposition. A new gas-phase composition is then established for the next film to be deposited before again generating plasma in the gas reactants to deposit an epitaxial film of different composition or different degree of doping on top of the previous one.
REFERENCES:
patent: 3168422 (1965-02-01), Allegretti et al.
patent: 3310425 (1967-03-01), Goldsmith
patent: 3485666 (1969-12-01), Sterling et al.
patent: 4421592 (1983-12-01), Shuskus et al.
patent: 4443489 (1984-04-01), Cowher et al.
patent: 4448633 (1984-05-01), Shuskus
Townsend et al, "Epitaxial Growth of Silicon---" Solid-State Electronics, 1973, vol. 16, pp. 39-42.
Suzuki et al, "Effect of--- RF Plasma Chemical Vapor Deposition" J. Appl. Phys., vol. 54(3), Mar. 1983, pp. 1466-1470.
Fonstad, Jr. Clifton G.
Reif L. Rafael
Massachusetts Institute of Technology
Saba William G.
LandOfFree
Growth of epitaxial films by plasma enchanced chemical vapor dep does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Growth of epitaxial films by plasma enchanced chemical vapor dep, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Growth of epitaxial films by plasma enchanced chemical vapor dep will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-749514