Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1984-06-08
1986-04-01
Saba, William G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29576E, 29576B, 148DIG17, 148DIG158, 156612, 204192E, 204192S, 204192EC, 427 39, H01L 21203, H01L 21302
Patent
active
045796092
ABSTRACT:
A method and apparatus for low temperature deposition of epitaxial films using low pressure chemical vapor deposition (CVD) with and without plasma enhancement. More specifically, the process enables CVD of epitaxial silicon at temperatures below 800.degree. C. by use of an in situ argon plasma sputter cleaning treatment of the silicon substrate prior to deposition.
REFERENCES:
patent: 3021271 (1962-02-01), Wehner
patent: 3316130 (1967-04-01), Dash et al.
patent: 3484358 (1969-12-01), Androshuk et al.
patent: 3485666 (1969-12-01), Sterling et al.
patent: 4412903 (1983-11-01), Green et al.
patent: 4428111 (1984-01-01), Swartz
"Silicon Molecular Beam Epitaxy with Simultaneous Ion Implant Doping", by Yusuke Ota, J. Appl. Phys. 51(2), 2/80.
"Ionized-Cluster Beam Deposition", by Takagi et al., J. Voc. Sci. Technol., vol. 12, No. 6, Nov./Dec. 1975.
"Introduction to Chemical Vapor Deposition", by M. L. Hammond, Solid State Technology, Dec. 1979.
"Ion Beam Epitaxy of Silicon on Ge and Si at Temperatures of 400K", by Zalm et al., Appl. Phys. Lett. 41(2), Jul. 15, 1982.
"Computer Simulation in Silicon Epitaxy", by Reif et al., J. Electrochem. Soc.: Solid-State Science and Technology, 4/81.
"Autodoping Effects in Silicon Epitaxy", by G. R. Srinivasan, J. Electrochem. Soc.: Solid-State Science and Technology, 6/80.
"Silicon Epitaxy at Reduced Pressure", by R. B. Herring, Semiconductor Silicon, Electrochem. Soc., 126 (1979).
"Low-Pressure Silicon Epitaxy", by Krullmann et al., IEEE Transactions on Electron Devices, vol. ED-29, No. 4, 4/82.
Epitaxial Growth of Silicon From SiH.sub.4 in the Temperature Range 800.degree.-1150.degree. C., Solid State Electronics, 1973, vol. 16, pp. 39-42, Townsend et al.
Effect of Si-Ge Buffer Layer for Low-Temperature Si Epitaxial Growth on Si Substrate by rf Plasma Chemical Vapor Deposition, J. Appl. Phys. 54(3), Mar. 1983, Suzuki et al.
Silicon Epitaxy by Plasma Dissociation of Silane, Proc. 11th Congress (1979) International) on Solid State Devices, 647 (1974), Suzuki et al.
Epitaxial Growth of Si-Ge Layers on Si Substrates by Plasma Dissociation of SiH.sub.4 and GeH.sub.4 Mixture, J. Appl. Phys. 54 (11), Nov. 1983, Suzuki et al.
Richman et al, "Low-Temperature Vapor Growth of Homoepitaxial Silicon", R.C.A. Review, Dec. 1970, vol. 31, pp. 613-619.
Burger Wayne R.
Donahue Thomas J.
Reif L. Rafael
Massachusetts Institute of Technology
Saba William G.
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