Growth of epitaxial films by chemical vapor deposition

Details Growth of epitaxial films by chemical vapor deposition Growth of epitaxial films by chemical vapor deposition

1986-12-09

1988-09-27

Bueker, Richard

Coating apparatus

Gas or vapor deposition

Multizone chamber

118723, 118725, C23C 1650

Patent

active

047733551

ABSTRACT:
A method and apparatus for forming epitaxial thin film layers on substrates having abrupt transitions between layers of different composition or layers of different or like composition with different degrees of doping included therein. Gaseous reactants containing the desired elements to be included in the first film layer are injected into a CVD reaction chamber containing a substrate. The substrate is heated to a temperature high enough to obtain an epitaxial deposit, but low enough so as not to cause decomposition of the reactants. Once the gaseous reactant flows reach steady-state, an electric discharge or plasma is created in the gases to initiate the decomposition reaction and obtain a deposit. In this way, no transient effects are present. Once the deposit has attained sufficient thickness, the electric discharge is turned off to abruptly terminate deposition. phase composition is then established for the next film to be deposited before again generating plasma in the gas reactants to deposit an epitaxial film of different composition or different degree of doping on top of the previous one.

REFERENCES:
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patent: 4131659 (1978-12-01), Authier
patent: 4389970 (1983-06-01), Edgerton
patent: 4524719 (1985-06-01), Campbell
Brodsky, IBM Tech. Dis. Bul., vol. 22, No. 8A, 1980.

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