Growth of bulk single crystals of aluminum nitride from a melt

Details Growth of bulk single crystals of aluminum nitride from a melt Growth of bulk single crystals of aluminum nitride from a melt

1999-07-27

2000-05-23

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

117201, 117202, 117950, 117952, C30B 3500

Patent

active

060662050

ABSTRACT:
Large diameter single crystals of aluminum nitride (AlN) are grown isotropically by injecting a nitrogen-containing gas into liquid aluminum at elevated temperatures. A seed crystal that is maintained at a temperature below that of the surrounding liquid aluminum is pulled from the melt, while the AlN that is formed in the melt is deposited on the seed crystal. An apparatus for carrying out the method is also disclosed.

REFERENCES:
patent: 5858086 (1999-01-01), Hunter
patent: 5972109 (1999-10-01), Hunter

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