Growth of bulk single crystals of aluminum nitride

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for treating single-crystal

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117200, 117900, C30B 3500

Patent

active

059721090

ABSTRACT:
Bulk, low impurity aluminum nitride (AlN) single crystals are grown by sublimation or similar deposition techniques at growth rates greater than 0.5 mm/hr.

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