Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for treating single-crystal
Patent
1998-07-07
1999-10-26
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
With means for treating single-crystal
117200, 117900, C30B 3500
Patent
active
059721090
ABSTRACT:
Bulk, low impurity aluminum nitride (AlN) single crystals are grown by sublimation or similar deposition techniques at growth rates greater than 0.5 mm/hr.
Faust Richard S.
Garrett Felisa
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