Growth-modified thermal oxidation for thin oxides

Details Growth-modified thermal oxidation for thin oxides Growth-modified thermal oxidation for thin oxides

1991-06-12

1992-07-21

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437239, 437946, 148DIG118, H01L 21322, H01L 21324

Patent

active

051322447

ABSTRACT:
A method is disclosed for growing relatively thin (e.g., <250 .ANG.) thermal oxides which results in lowering the defect density, mobile ion concentration, interface trapped charge density, and stress of the structure. In particular, the prior art oxidation process is modified to include in situ preoxidation silicon surface treatments to improve the silicon nucleation surface. For example, gettering operations may be performed to remove metal-ion contaminants from the silicon nucleation surface, and high temperature annealing operations may be performed to remove any local stress gradients which exist in the silicon substrate during the initial stages of oxidation. By improving the silicon nucleation surface, the subsequently grown thin oxide will be improved in terms of the qualities mentioned above.

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