Growth method of nitride semiconductor layer and light...

Details Growth method of nitride semiconductor layer and light... Growth method of nitride semiconductor layer and light...

2011-07-12

2011-07-12

Landau, Matthew C (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257SE29069

Reexamination Certificate

active

07977664

ABSTRACT:
Growing a first nitride semiconductor layer on an AlxGayIn1-x-yN(0≦x≦1, 0<y≦1, 0<x+y≦1)layer, reducing the thickness of the first nitride semiconductor layer by growth interruption and, growing a second nitride semiconductor layer having a band gap energy higher than that of the first nitride semiconductor layer on the first nitride semiconductor layer with the reduced thickness and a light emitting device using the growth method.

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