Growth method for a rod form of single oxide crystal

Details Growth method for a rod form of single oxide crystal Growth method for a rod form of single oxide crystal

1994-03-28

1995-10-17

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 23, C30B 1502

Patent

active

054580838

ABSTRACT:
A method of growing a rod form of a single oxide crystal is disclosed. The method uses a slit die which is placed in a crucible with a starting melt. The melt is seeded with a seed crystal while being rotated. The resulting crystal will have the same sectional shape as the shape of the upper surface of the die.

REFERENCES:
patent: 3527574 (1970-09-01), Labelle, Jr.
patent: 3870477 (1975-03-01), Labelle, Jr.
patent: 4184907 (1980-01-01), Yates
"EFG, The Invention And Application To Sapphire Growth"; Labelle, Jr., J. Cryst. Growth 50 (1980) pp. 8-17.

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