Grown side-wall silicided source/drain self-align CMOS fabricati

Details Grown side-wall silicided source/drain self-align CMOS fabricati Grown side-wall silicided source/drain self-align CMOS fabricati

1987-08-24

1988-08-16

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 41, 437 58, 437 40, 437200, 437160, 437161, 437162, 437192, 357 71, 148DIG147, H01L 21225

Patent

active

047644818

ABSTRACT:
A process for forming CMOS devices uses outdiffusion of implanted ions in a patterned refractory silicidable layer to form the source/drain regions of the device. Moreover, the oxidation of the sidewalls of openings formed in the layer serves to isolate the layer from the polysilicon gate electrode which is later formed in the openings in this layer.

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