Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1976-02-23
1977-09-27
Ozaki, G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148172, 148175, 252 623GA, 357 23, 357 60, 148 15, H01L 21208, H01L 21205
Patent
active
040509648
ABSTRACT:
A process for improving the smoothness of semiconductor layers grown by epitaxy is described. Smooth epitaxial layers, free of crystal terraces, are attained by misorienting the growth surface of the substrate from a major crystallographic plane by a small critical angle approximately equal to the tread-to-riser angle of terraces which would be formed if the epitaxial layer were deposited on a growth surface nominally parallel to the major plane. The critical angle is a function of both the growth temperature and the crystal composition. Specific examples for the growth of LPE Al.sub.x Ga.sub.1-x As at various growth temperatures and values of x on GaAs substrates misoriented from the (100) and (111)B major planes are given. Also described are examples of silicon layers grown by CVD on (111) substrates to measure the critical angle in the (112) direction.
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Rode, J. Crystal Growth, vol. 27, (1974), pp. 313-315.
Bell Telephone Laboratories Incorporated
Ozaki G.
Urbano Michael J.
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