Growing polygonal carbon from photoresist

Details Growing polygonal carbon from photoresist Growing polygonal carbon from photoresist

2010-01-12

2011-12-20

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Having organic semiconductive component

C438S142000, C438S149000, C438S478000, C257SE21049, C257SE21040

Reexamination Certificate

active

08080441

ABSTRACT:
A method of growing polygonal carbon from photoresist and resulting structures are disclosed. Embodiments of the invention provide a way to produce polygonal carbon, such as graphene, by energizing semiconductor photoresist. The polygonal carbon can then be used for conductive paths in a finished semiconductor device, to replace the channel layers in MOSFET devices on a silicon carbide base, or any other purpose for which graphene or graphene-like carbon material formed on a substrate is suited. In some embodiments, the photoresist layer forms both the polygonal carbon layer and an amorphous carbon layer over the polygonal carbon layer, and the amorphous carbon layer is removed to leave the polygonal carbon on the substrate.

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