Growing epitaxial films when the misfit between film and substra

Details Growing epitaxial films when the misfit between film and substra Growing epitaxial films when the misfit between film and substra

1977-12-30

1979-11-13

Silverman, Stanley S.

Stock material or miscellaneous articles

All metal or with adjacent metals

Composite; i.e., plural, adjacent, spatially distinct metal...

148175, 156610, 156612, 156613, 428673, 428680, B32B 1504, H01L 21205, H01L 2184, H01L 2926

Patent

active

041744225

ABSTRACT:
A method is described for reducing the defect density in a crystalline film grown on a substrate with which it has a substantial misfit. The principle of the method is to grow the film, not directly from the substrate, but from a layer of small islands previously deposited onto the substrate. The technique has been fully investigated for the growth of Ag (and then Au) films on NaCl, a substantial improvement in the quality of the overgrown film being obtained when an intermediate layer of Ni islands is deposited on the NaCl prior to the deposition of the Ag. It has been demonstrated that it is important for the intermediate islands to be

REFERENCES:
patent: 3661676 (1972-05-01), Wong et al.
patent: 3788890 (1974-01-01), Mader et al.
patent: 3935040 (1976-01-01), Mason
patent: 3985590 (1976-10-01), Mason

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