Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2005-02-01
2005-02-01
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S481000
Reexamination Certificate
active
06849474
ABSTRACT:
A low defect gallium nitride based semiconductor, and method for its production, is disclosed. A first gallium nitride based semiconductor layer overlying a substrate of a dissimilar material is grown. A trench is formed in the first gallium nitride based semiconductor layer. A material is deposited on a surface of the first gallium nitride based semiconductor layer to prevent a second gallium nitride based semiconductor layer, of a material different from the first gallium nitride based semiconductor layer, from nucleating thereon. The bottom surface of the trench is of a material such that the second gallium nitride based semiconductor layer will not nucleate thereon. The second gallium nitride based semiconductor material is grown, extending from at least one of the side walls of the trench, the second gallium nitride based semiconductor material having fewer defects than the first gallium nitride based semiconductor layer.
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Chen Yong
Wang Shih-Yuan
Coleman W. David
Lumileds Lighting U.S. LLC
Patent Law Group LL
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