Growing a low defect gallium nitride based semiconductor

Details Growing a low defect gallium nitride based semiconductor Growing a low defect gallium nitride based semiconductor

2005-02-01

2005-02-01

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S481000

Reexamination Certificate

active

06849474

ABSTRACT:
A low defect gallium nitride based semiconductor, and method for its production, is disclosed. A first gallium nitride based semiconductor layer overlying a substrate of a dissimilar material is grown. A trench is formed in the first gallium nitride based semiconductor layer. A material is deposited on a surface of the first gallium nitride based semiconductor layer to prevent a second gallium nitride based semiconductor layer, of a material different from the first gallium nitride based semiconductor layer, from nucleating thereon. The bottom surface of the trench is of a material such that the second gallium nitride based semiconductor layer will not nucleate thereon. The second gallium nitride based semiconductor material is grown, extending from at least one of the side walls of the trench, the second gallium nitride based semiconductor material having fewer defects than the first gallium nitride based semiconductor layer.

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