Growing [110] silicon on [001]-oriented substrate with...

Details Growing [110] silicon on [001]-oriented substrate with... Growing [110] silicon on [001]-oriented substrate with...

2007-04-03

2007-04-03

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

With specified crystal plane or axis

C257S628000, C438S150000

Reexamination Certificate

active

10956283

ABSTRACT:
An assembly and method of making the same wherein the assembly incorporates a rare-earth oxide film to form a [110] crystal lattice orientation semiconductor film. The assembly comprises a substrate, a rare-earth oxide film formed on the substrate, and a [110]-oriented semiconductor film formed on the rare-earth oxide film. The rare-earth oxide film having a [110] crystal lattice orientation. The substrate has a [001] crystal lattice orientation.

REFERENCES:
patent: 6749686 (2004-06-01), Ami et al.
patent: 2002/0119659 (2002-08-01), Ami et al.
patent: 2000-281494 (2000-10-01), None

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