Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2006-11-28
2006-11-28
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S071000, C257S296000, C257S534000, C257S599000
Reexamination Certificate
active
07141864
ABSTRACT:
There is disclosed a semiconductor device comprising at least one capacitive element group having a plurality of unit capacitive elements. At least one lead-out electrode for bottom electrodes of the unit capacitive elements of the capacitive element group is provided along a circumference going around top electrodes as a whole of the capacitive element group. The at least one lead-out electrode is provided so as to surround the top electrodes as a whole of the capacitive element group.
REFERENCES:
patent: 5083184 (1992-01-01), Eguchi
patent: 5747375 (1998-05-01), Kaneko
patent: 2003/0006481 (2003-01-01), Miyada et al.
patent: 11-312784 (1999-11-01), None
Flynn Nathan J.
Sanyo Electric Co, Ltd.
Seraboff Steven C.
SoCal IP Law Group LLP
Wilson Scott R.
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