Group VI doping of III-V semiconductors during ALE

Details Group VI doping of III-V semiconductors during ALE Group VI doping of III-V semiconductors during ALE

1988-07-01

1989-08-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG40, 148DIG65, 148DIG110, 148 331, 156610, 437111, 437126, 437912, 437965, H01L 21205

Patent

active

048596272

ABSTRACT:
A method of producing n-type III-V compound semiconductor comprises growing a plurality of monolayers of III-V compound semiconductor molecules on a III-V compound substrate; growing a single layer of group VI element on the III-V monolayers so as to occupy the lattice points for group V element by means of Atomic Layer Epitaxy process; decreasing the number of group VI element by exposing the single layer to the gas of group V element; and growing a plurality of monolayers of III-V compound semiconductor molecules on the group VI element-doped layer by means of the Atomic Layer Epitaxy process.

REFERENCES:
patent: 4058430 (1977-11-01), Suntola et al.
Ozeki et al., "Growth of AlGaAs Using a Pulsed Vapor Phase Method," IEEE Solid State Devices and Materials, 1987, pp. 475-478.
Koboyashi et al., "Flow-Rate Modulation Epitaxy of GaAs," Inst. Phys. Conf. Ser. No. 79 Chapter 13, 1985, pp. 737-738.
Pessa et al., "Atomic Layer Epitaxy . . . ," J. Appl. Phys. 54(10), Oct. 1983, pp. 6047-6050.
H. Ohno, E. Ikeda, and H. Hasegawa "Planar Doping by Interrupted MOVPE Growth of GaAs" Journal of Crystal Growth 68 (1984) 15-20.
S. Sasa, S. Muto, K. Kondo, H. Ishikawa, and S. Hiyamizu "Si Atomatic-Planar-Doping in GaAs Made by Molecular Beam Epitaxy" Japanese Journal of Applied Physics vol. 24 No. 8 Aug. 1985 pp. L602-L604.
E. F. Schubert, A. Fischer, and K. Ploog, "The Delta-Doped Field-Effect Transistor (.delta.FET)" IEEE Transactions on Electron Devices, vol. ED-33, No. 5 May 1986.
A. Usui, and H. Sunakawa, "GaAs Atomic Layer Epitaxy by Hydride VPE" Japanese Journal of Applied Physics vol. 35, No. 3, Mar., 1986 pp. L212-L214.
T. Suntola, "Atomic Layer Epitaxy" Extended Extracts of the 16th (1984 International) Conference on Solid State Devices and Materials, Kobe, 1984, pp. 647-650.

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