Group IV semiconductor thin films formed at low temperature usin

Details Group IV semiconductor thin films formed at low temperature usin Group IV semiconductor thin films formed at low temperature usin

1994-03-24

1996-11-19

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437233, H01L 2120, H01L 21208

Patent

active

055762484

ABSTRACT:
Thin films of the Group IV materials silicon and germanium are produced in the range of 2.5 to 25 nm thick from nanocrystal precursors. According to the invention a solid, continuous film of silicon or germanium is formed by depositing a contiguous layer of nanocrystals of the semi-conductor materials onto a substrate, then heating the layer to a temperature below the bulk melting temperature which is nonetheless adequate to melt the nanocrystals and form a continuous liquid thin film upon cooling. The resulting thin film may be doped or intrinsic. The lower processing temperatures make it possible to form these thin semi-conductor films with less stringent thermal requirements on the underlayers, substrates and other related structures, thus supporting applications in microelectronics, solar conversion and so forth.

REFERENCES:
patent: 4330358 (1982-05-01), Grabmaier et al.
patent: 4407858 (1983-10-01), Hanke et al.
patent: 5262357 (1993-11-01), Alivisatos et al.
J. R. Heath, S. M. Gates, C. A. Chess, "Nanocrystal seeding: A low temperature route to polycrystalline Si films", Appl.Phys.Lett.64(26), 27 Jun. 1994, pp. 3569-3571.
G. Samdani, S. Moore, G. Parkinson, "Tiny Particles Aim for Big Markets", Chemical Eng./Aug. 1994 pp. 35-39.

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