Group III-V semiconductor electrical contact

Details Group III-V semiconductor electrical contact Group III-V semiconductor electrical contact

1987-06-10

1988-07-12

James, Andrew J.

357 65, 357 16, 357 67, H01L 29167, H01L 2348, H01L 29161, H01L 2962

Patent

active

047573694

ABSTRACT:
A layer of an amphoteric dopant on the surface of a group III-V intermetallic semiconductor crystal will diffuse into the crystal surface in a heating cycle forming a stable contact. The contact can be ohmic or rectifying depending on the localized presence of an excess of one crystal ingredient. A layer of Si on GaAs upon heating forms a rectifying contact. When the layer of Si contains As, the contact is ohmic.

REFERENCES:
patent: 4035205 (1977-07-01), Lebailly et al.
patent: 4316201 (1982-02-01), Christou et al.
patent: 4583110 (1986-04-01), Jackson et al.
patent: 4615766 (1986-10-01), Jackson et al.
IBM Technical Disclosure Bulletin, vol. 26, No. 10B, Mar. 1984, p. 5396, "Silicide Ohmic Contact to p-Type GaAs" by Jackson et al.
IBM Technical Disclosure Bulletin, vol. 25, No. 3A, Aug. 1982, p. 1195, "GaAs Ohmic Contact" by Heiblum et al.
Solid State Electronics, Pergamon Press, 1965, vol. 8, pp. 943-946, "The Diffusion of Silicon in Gallium Arsenide" by G. R. Antell.
IBM Technical Disclosure Bulletin, vol. 13, No. 7, Dec. 1970, p. 1876, "Deposition of Germanium on a Germanium or Gallium Arsenide Substrate" by Berkenblit et al.
Electronics Letters, vol. 15, No. 24, Nov. 22, 1979, p. 800, by Stall et al.
J. Appl. Phys. 49(5), May 1978, p. 2998, "Smooth and Continuous Ohmic Contacts to GaAs Using Epitaxial Ge Films" by Anderson, Jr. et al.

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