Group III - V semiconductor devices with improved switching spee

Details Group III - V semiconductor devices with improved switching spee Group III - V semiconductor devices with improved switching spee

1988-10-19

1990-06-19

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307451, 307263, 307548, H03K 19094, H03K 512

Patent

active

049356470

ABSTRACT:
To decrease the time required to charge parasitic capacitances, and to thereby increase the maximum permissible switching frequency to which a logic circuit can respond, a GaAs device is disclosed having a current-injecting circuit that generates an initial pulse of capacitor-charging current during a "0"-to-"1" transition in the output state of a GaAs device. The pulse is sufficiently large to quickly charge the parasitic capacitances, and of sufficiently brief duration so that a minimum line width is permissible which is substantially equivalent to that which would be applicable in the absence of the current-injecting circuit.

REFERENCES:
patent: 4810969 (1989-03-01), Fulkerson

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