Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2005-04-12
2005-04-12
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S011000, C257S013000, C257S432000, C257S744000, C438S022000
Reexamination Certificate
active
06878959
ABSTRACT:
The group III-V semiconductor device comprises a quantum well layer, barrier layers sandwiching the quantum well layer and a region of a third semiconductor material formed by spatially-selective intermixing of atoms on the group V sublattice between the first semiconductor material of the quantum well layer and the second semiconductor material of the barrier layer. The quantum well layer is a layer of a first semiconductor material that has a band gap energy and a refractive index. The barrier layers are layers of a second semiconductor material that has a higher band gap energy and a lower refractive index than the first semiconductor material. The third semiconductor material has a band gap energy and a refractive index intermediate between the band gap energy and the refractive index, respectively, of the first semiconductor material and the second semiconductor material.
REFERENCES:
patent: 4731789 (1988-03-01), Thornton
patent: 4771010 (1988-09-01), Epler et al.
patent: 4824798 (1989-04-01), Burnham et al.
patent: 5048038 (1991-09-01), Brennan et al.
patent: 6717971 (2004-04-01), Marsh et al.
Bour David P.
Chang Ying-Lan
Mars Danny E.
Takeuchi Tetsuya
Agilent Technologie,s Inc.
Flynn Nathan J.
Wilson Scott R
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