Group III-V nitride-based semiconductor substrate and method...

Details Group III-V nitride-based semiconductor substrate and method... Group III-V nitride-based semiconductor substrate and method...

2007-09-18

2007-09-18

Purvis, Sue A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Low workfunction layer for electron emission

C257S189000, C257S200000, C257S615000, C257SE33025, C257SE33033

Reexamination Certificate

active

11312634

ABSTRACT:
A group III-V nitride-based semiconductor substrate having a group III-V nitride-based semiconductor thick film with a same composition in the entire film. The thick film has a first region with a predetermined impurity concentration and a second region with an impurity concentration lower than the first region.

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patent: 2006/0175600 (2006-08-01), Sato et al.
patent: 04-297023 (1992-10-01), None
A. Usui et al., “Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy”, Jpn. J. Appl. Phys., vol. 36, pp. L899-L902, 1997.
O. Nam et al., “Lateral Epitaxy of Low Defect Density GaN Layers via Organometallic Vapor Phase Epitaxy”, Appl. Phys. Lett., vol. 71, No. 18, pp. 2638-2640, 1997.

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