Group III-V interdiffusion prevented hetero-junction semiconduct

Details Group III-V interdiffusion prevented hetero-junction semiconduct Group III-V interdiffusion prevented hetero-junction semiconduct

1994-12-09

1996-05-28

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257 18, 257 20, 257 24, 257192, 257195, H01L 2906, H01L 310328, H01L 31072

Patent

active

055214045

ABSTRACT:
A high electron mobility transistor type group III-V compound semiconductor device includes a substrate of a group III-V compound semiconductor, an electron transfer layer of a group III-V compound semiconductor formed on the substrate, an impurity doped electron supply layer of a group III-V compound semiconductor having a wider band gap and smaller electron affinity than the electron transfer layer, and a spacer layer of a group III-V compound semiconductor having a lattice mismatch with the electron supply layer, the spacer layer being formed between the electron transfer layer and the electron supply layer. A HEMT type group III-V compound semiconductor device is provided which uses an Si-doped electron supply layer of material such as InGaP other than AlGaAs and has good device properties.

REFERENCES:
patent: 4814838 (1989-03-01), Kuroda et al.
patent: 5023675 (1991-06-01), Ishikawa
patent: 5099295 (1992-03-01), Ogawa
patent: 5151757 (1992-09-01), Enoki et al.
L. F. Luo et al., "P-channel modulation-doped field-effect transistors based on AlSb0.9As0.1/GaSb", IEEE Electron Device Letters, vol. 11, No. 12, Dec. 1990, pp. 567-569, New York, U.S.
J. Dickmann, "Influence of the delta doping position in the channel on the device performance of AlGaAs/InGaAs modulation-doped field-effect transistors", Applied Physics Letters, vol. 60, No. 1, Jan. 6, 1992, pp. 88-90, New York, U.S.
Tan et al, "60-GHz Pseudomorphic AlGaAs/InGaAs Low-Noise HEMT's," IEEE Electron Device Letters, vol. 12, No. 1, Jan. 1991, pp. 23-25.

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