Group III-V compound semiconductor device having p-region formed

Details Group III-V compound semiconductor device having p-region formed Group III-V compound semiconductor device having p-region formed

1988-11-30

1990-09-11

James, Andrew J.

357 15, 357 16, 357 22, 357 60, H01L 2972

Patent

active

049566989

ABSTRACT:
Implantation of a Group V ion species (e.g., phosphorus or arsenic) into an In-based Group III-V compound semiconductor (e.g., InP, InGaAs) followed by implantation of Be ions produces a shallow p-type surface layer and avoids significant in-diffusion of the dopant species. High carrier concentrations and activation efficiences are attained. The technique has application in the fabrication of FETs, APDs and ohmic contacts.

REFERENCES:
patent: 4385938 (1983-05-01), Park et al.
J. P. Donnelly et al., Appl. Phys. Lett., vol. 31, pp. 418-420, (1977).
T. Inada et al., J. Appl. Phys., vol. 52, pp. 6623-6629, (1981).
K. V. Vaidyanathan et al., Nucl. Instru. & Methods, vol. 182/183, pp. 6316, (1981).
J. D. Oberstar et al., J. Electrochem. Soc., vol. 129, p. 1312, (1982).
A. N. M. Masum Coudhury et al., Appl. Phys. Lett., vol. 43, pp. 381-383, (1983).
B. Molner et al., Mat. Res. Soc. Symp. Proc., vol. 27, pp. 329-334, (1981).
J. P. Donnelly, Nucl. Inst. & Methods, vol. 182/183, pp. 553-571, (1981).
U. Konig et al., J. Elec. Mat., vol. 14, pp. 311-326, (1985).
D. E. Davies et al., Appl. Phys. Lett., vol. 44, No. 3, pp. 304-306, (1984).
E. V. K. Rao et al., Jap. J. Appl. Phys., vol. 25, No. 6, pp. L458-461, (Jun., 1986).
S. S. Gill et al., J. Electrochem. Soc., Dec. 1986, pp. 2590-2596.
L. N. Kurbatov et al., Sov. Phys.-Dokl., vol. 28, No. 1, Jan. 1983, pp. 45-47.
H. M. Macksey et al., IEEE Electron Device Letters, vol. EDL-8-No. 3, Mar. 1987, pp. 116-117.
A. T. Yuen et al., Ion Beam Processes in Advanced Electronic Materials and Device Technology, pp. 285-290, 1985.

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