Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Lateral bipolar transistor structure
Reexamination Certificate
2005-08-10
2009-08-18
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Lateral bipolar transistor structure
C257S197000, C257S566000, C257S563000, C257S564000
Reexamination Certificate
active
07576409
ABSTRACT:
A wafer comprising at least one high FtHBT and at least one high BVceo HBT having various collector profiles on a common III-V compound semiconductor based wafer. The N+ implant in the collector varies the collector profiles of individual HBTs on the wafer. The method for preparing the device comprises forming of HBT layers up to and including collector layer on non-silicon based substrate, performing ion implantation, annealing for implant activation, and forming remaining HBT layers.
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English translation (machine) for JP 05-175438.
English translation (machine) for JP 05-175438, Jul. 13, 1993.
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Chen Mary
Sokolich Marko
HRL Laboratories LLC
Ladas & Parry
Lee Eugene
LandOfFree
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