Group III-V compound semiconductor and group III-V compound...

Details Group III-V compound semiconductor and group III-V compound... Group III-V compound semiconductor and group III-V compound...

2005-01-11

2005-01-11

Jackson, Jerome (Department: 2815)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Graded composition

C257S079000, C257S615000, C257S190000, C257S191000, C257S613000, C257S631000, C257S189000, C257S200000, C372S043010

Reexamination Certificate

active

06841409

ABSTRACT:
An AlGaInP layer is formed on a substrate made of GaAs, and an AlGaAs layer is formed on the AlGaInP layer via a buffer layer therebetween. The buffer layer has a thickness of about 1.1 nm and is made of AlGaInP whose Ga content is smaller than that of the AlGaInP layer. The buffer layer may alternatively be made of AlGaAs whose Al content is smaller than that of the AlGaAs layer.

REFERENCES:
patent: 5744829 (1998-04-01), Murasato et al.
patent: 6181721 (2001-01-01), Geels et al.
patent: 6449299 (2002-09-01), Sato

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