Group III-V compound semiconductor and group III-V compound...

Details Group III-V compound semiconductor and group III-V compound... Group III-V compound semiconductor and group III-V compound...

2008-07-22

2008-07-22

Rose, Kiesha L (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257S190000

Reexamination Certificate

active

07402843

ABSTRACT:
An AlGaInP layer is formed on a substrate made of GaAs, and an AlGaAs layer is formed on the AlGaInP layer via a buffer layer therebetween. The buffer layer has a thickness of about 1.1 nm and is made of AlGaInP whose Ga content is smaller than that of the AlGaInP layer. The buffer layer may alternatively be made of AlGaAs whose Al content is smaller than that of the AlGaAs layer.

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patent: 5744829 (1998-04-01), Murasato et al.
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patent: 6118800 (2000-09-01), Kidoguchi et al.
patent: 6181721 (2001-01-01), Geels et al.
patent: 6449299 (2002-09-01), Sato

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