Group III-V compound field effect transistor with diffusion barr

Details Group III-V compound field effect transistor with diffusion barr Group III-V compound field effect transistor with diffusion barr

1988-02-23

1989-10-10

James, Andrew J.

357 22, 357 16, 357 65, 357 67, 357 71, H01L 2978, H01L 29201, H01L 2946

Patent

active

048735582

ABSTRACT:
Group III-V compound MISFETs include a low-doped diffusion barrier layer disposed between a source/drain contact-facilitating layer and the channel layer.

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Chang et al., IEEE Elect. Dev. Letters, vol. EDL-5 May 84, "Submicrometer . . . Transconductive", pp. 169-171.
Ohata et al. Inst. Phys. Conf. Ser. No. 63: Chapt. 7 Int. Symp. Gas and Related Compounds, Japan 1981, pp. 353-358.
Itoh et al. IEEE Trans. on Elec. Dev. vol. ed. 30, No. 7, 7/83 "X-Band . . . Misfets", pp. 811-815.
Ohata et al. IEEE Trans. on Elec. Dev., vol. ED-27, No. 6, Jun. 80, "Super Low-Noise . . . Structure", pp. 1029-1034.

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