Group III-V compound based optoelectronic device on silicon subs

Coherent light generators – Particular component circuitry – Optical pumping

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357 16, 357 17, 372 45, H01L 2712

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active

048976997

ABSTRACT:
Disclosed is an optoelectronic device implanted on a silicon substrate and comprising, in particular, on this substrate, a set of matching layers on which there is made a first confinement layer based on indium phosphide, an active layer based on Ga.sub.x In.sub.1-x As.sub.1-y and a second active layer of indium phosphide.

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