Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2007-03-13
2007-03-13
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S048000, C438S046000, C438S093000, C257SE21059
Reexamination Certificate
active
10519571
ABSTRACT:
The present invention provides a group III nitride semiconductor substrate with low defect density as well as small warp and a process for producing the same; for instance, the process according to the present invention comprises the following series of steps of: forming a metallic Ti film63on a sapphire substrate61, followed by treatment of nitration to convert it into a TiN film64having fine pores; thereafter growing a HVPE-GaN layer66thereon; forming voids65in the HVPE-GaN layer66by means of effects of the metallic Ti film63and the TiN film64; and peeling the sapphire substrate61from the region of the voids65to remove it therefrom.
REFERENCES:
patent: 4849260 (1989-07-01), Kusumoto et al.
patent: 6303405 (2001-10-01), Yoshida et al.
patent: 6800501 (2004-10-01), Miki et al.
patent: 6924159 (2005-08-01), Usui et al.
patent: 1 271 627 (2003-01-01), None
patent: 63-188983 (1988-08-01), None
patent: 10-312971 (1998-11-01), None
patent: 2000-012900 (2000-01-01), None
patent: 2000-228539 (2000-08-01), None
patent: 2001-223165 (2001-08-01), None
patent: 2001-284643 (2001-10-01), None
patent: 2002-050585 (2002-02-01), None
patent: 2002-050586 (2002-02-01), None
patent: 2002-343718 (2002-11-01), None
patent: 2003-178984 (2003-06-01), None
By Tsvetanka S. Zheleva et al., “Pendeo-Epitaxy—A New Approach for Lateral Growth of Gallium Nitride Structures”, MRS Internet J. Nitride Semicond. Res. 4S1, G3.38, 1999, pp. 2-7.
By Ok-Hyun Nam et al., “Lateral Epitaxy of Low Defect Density GaN Layers Via Organometallic Vapor Phase Epitaxy”, Appl. Phys. Lett., 71 (18), Nov. 3, 1997, pp. 1-4.
By Masaru Kuramoto et al., “Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact”, Japanese Journal of Applied Physics, vol. 38, No. 2B, Feb. 15, 1999, pp. 1-4.
By Michael Kelly et al., “Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff”, Japanese Journal of Applied Physics, vol. 38, No. 3A, Mar. 1, 1999, pp. 1-4.
Oshima Yuichi
Shibata Masatomo
Usui Akira
Hitachi Cable Ltd.
Lebentritt Michael
NEC Corporation
Ullah Elias
Young & Thompson
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