Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Substrate dicing
Reexamination Certificate
2010-07-14
2011-12-06
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Substrate dicing
C438S042000, C257SE21085, C257SE21238, C257SE21599
Reexamination Certificate
active
08071405
ABSTRACT:
Provided is a group-III nitride semiconductor laser device with a laser cavity enabling a low threshold current, on a semipolar surface of a support base the c-axis of a hexagonal group-III nitride of which tilts toward the m-axis. In a laser structure13, a first surface13ais a surface opposite to a second surface13band first and second fractured faces27, 29extend each from an edge13cof the first surface13ato an edge13dof the second surface13b. A scribed mark SM1extending from the edge13cto the edge13dis made, for example, at one end of the first fractured face27, and the scribed mark SM1or the like has a depressed shape extending from the edge13cto the edge13d. The fractured faces27, 29are not formed by dry etching and thus are different from the conventional cleaved facets such as c-planes, m-planes, or a-planes. It is feasible to use emission of a band transition enabling a low threshold current.
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Ikegami Takatoshi
Katayama Koji
Takagi Shimpei
Ueno Masaki
Yoshizumi Yusuke
Ghyka Alexander
Nikmanesh Seahvosh
Sartori Michael A.
Sumitomo Electric Industries Ltd.
Thelen Leigh D.
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