Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Substrate dicing
Reexamination Certificate
2010-07-14
2011-12-13
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Substrate dicing
C438S042000, C257SE21085, C257SE21238, C257SE21599
Reexamination Certificate
active
08076167
ABSTRACT:
Provided are a group-III nitride semiconductor laser device with a laser cavity to enable a low threshold current on a semipolar surface of a hexagonal group-III nitride, and a method for fabricating the group-III nitride semiconductor laser device on a stable basis. Notches, e.g., notch113aand others, are formed at four respective corners of a first surface13alocated on the anode side of a group-III nitride semiconductor laser device11. The notch113aor the like is a part of a scribed groove provided for separation of the device11. The scribed grooves are formed with a laser scriber and the shape of the scribed grooves is adjusted by controlling the laser scriber. For example, a ratio of the depth of the notch113aor the like to the thickness of the group-III nitride semiconductor laser device11is not less than 0.05 and not more than 0.4, a tilt of a side wall surface at an end of the notch113ais not less than 45° and not more than 85°, and a tilt of a side wall surface at an end of the notch113bis not less than 10° and not more than 30°.
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Ikegami Takatoshi
Katayama Koji
Takagi Shimpei
Ueno Masaki
Yoshizumi Yusuke
Ghyka Alexander
Nikmanesh Seahvosh
Sartori Michael A.
Sumitomo Electric Industries Ltd.
Thelen Leigh D.
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