Group III nitride semiconductor element and epitaxial wafer

Details Group III nitride semiconductor element and epitaxial wafer Group III nitride semiconductor element and epitaxial wafer

2011-01-18

2011-01-18

Rodriguez, Armando (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010

Reexamination Certificate

active

07873088

ABSTRACT:
A primary surface23aof a supporting base23of a light-emitting diode21atilts by an off-angle of 10 degrees or more and less than 80 degrees from the c-plane. A semiconductor stack25aincludes an active layer having an emission peak in a wavelength range from 400 nm to 550 nm. The tilt angle “A” between the (0001) plane (the reference plane SR3shown in FIG.5) of the GaN supporting base and the (0001) plane of a buffer layer33ais 0.05 degree or more and 2 degrees or less. The tilt angle “B” between the (0001) plane of the GaN supporting base (the reference plane SR4shown in FIG.5) and the (0001) plane of a well layer37ais 0.05 degree or more and 2 degrees or less. The tilt angles “A” and “B” are formed in respective directions opposite to each other with reference to the c-plane of the GaN supporting base.

REFERENCES:
patent: 6165812 (2000-12-01), Ishibashi et al.
patent: 6653663 (2003-11-01), Ishida
patent: 2001/0030328 (2001-10-01), Ishida
patent: 2003/0132508 (2003-07-01), Ishida
patent: 2003/0205783 (2003-11-01), Ishida
patent: 2007/0164292 (2007-07-01), Okuyama
patent: 09-180998 (1997-07-01), None
patent: 10-135576 (1998-05-01), None
patent: 11-220223 (1999-08-01), None
patent: 11-354846 (1999-12-01), None
patent: 2001-230497 (2001-08-01), None
patent: 2002-016000 (2002-01-01), None
patent: 2002-344089 (2002-11-01), None
patent: 2003-112999 (2003-04-01), None
patent: 2005-277254 (2005-10-01), None
patent: 2007-189135 (2007-07-01), None

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