Group III-nitride layers with patterned surfaces

Etching a substrate: processes – Forming or treating an article whose final configuration has...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C216S083000, C438S745000

Reexamination Certificate

active

08070966

ABSTRACT:
A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer.

REFERENCES:
patent: 4987377 (1991-01-01), Gray et al.
patent: 5141459 (1992-08-01), Zimmerman
patent: 5218771 (1993-06-01), Redford
patent: 5334908 (1994-08-01), Zimmerman
patent: 5341390 (1994-08-01), Yamada et al.
patent: 5345456 (1994-09-01), Dai et al.
patent: 5359256 (1994-10-01), Gray
patent: 5363021 (1994-11-01), MacDonald
patent: 5396361 (1995-03-01), Sasaki et al.
patent: 5420876 (1995-05-01), Lussier et al.
patent: 5440574 (1995-08-01), Sobottke et al.
patent: 5449435 (1995-09-01), Ageno et al.
patent: 5450429 (1995-09-01), Klemer et al.
patent: 5479431 (1995-12-01), Sobottke et al.
patent: 5628659 (1997-05-01), Xie et al.
patent: 5793791 (1998-08-01), Lasser et al.
patent: 5814156 (1998-09-01), Elliott et al.
patent: 5861707 (1999-01-01), Kumar
patent: 5915164 (1999-06-01), Taskar et al.
patent: 5969467 (1999-10-01), Matsuno
patent: 6172325 (2001-01-01), Baird et al.
patent: 6218771 (2001-04-01), Berishev et al.
patent: 6448100 (2002-09-01), Schulte et al.
patent: 6809351 (2004-10-01), Kuramoto et al.
patent: 6825499 (2004-11-01), Nakajima et al.
patent: 7060542 (2006-06-01), Nakajima et al.
patent: 7099073 (2006-08-01), Chowdhury et al.
patent: 2002/0096994 (2002-07-01), Iwafuchi et al.
patent: 2002/0104999 (2002-08-01), Nakajima et al.
patent: 2003/0102476 (2003-06-01), Romano et al.
patent: 2003/0138983 (2003-07-01), Biwa et al.
patent: 2003/0168666 (2003-09-01), Okuyama et al.
patent: 2004/0129929 (2004-07-01), Okuyama et al.
patent: 2005/0145865 (2005-07-01), Okuyama et al.
patent: 8-51248 (1996-02-01), None
patent: 10233385 (1998-09-01), None
patent: 2000-149765 (2000-05-01), None
patent: 2001-148349 (2001-05-01), None
patent: 2002-341166 (2002-11-01), None
patent: 10-233385 (2008-09-01), None
patent: WO 92/02031 (1992-02-01), None
patent: WO 00/74107 (2000-12-01), None
patent: WO 2004/025733 (2004-03-01), None
Youtsey, C; Romano, L.T.; Adesida, I. Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations, Aug. 10, 1998. Applied Physics Letters. vol. 73, No. 6, p. 797-799.
Weyher, J.L.; Muller, S.; Grzegory, I.; Porowski, S. Chemical polishing of bulk and epitaxial GaN. Journal of Crystal Growth. 1997, p. 17-22.
Weyher, J.L; Macht, L. Tichelaar, F.D.; Zandbergen, H.W.; Hageman, P.R.; Larsen, P.K. Complementary study of defects in GaN by photo-etching and TEM. Materials Science and Engineering B 91-92, Apr. 30, 2002. p. 280-284.
Machine translation of part of Japanese Application No. 1997-0035920, Publication No. 10-233385, published Sep. 2, 1998, “Method for Etching Nitride Semiconductor”, Y. Takayuki et al., including English abstract page from Patent Abstracts of Japan. Available online from the Japanese Patent Office at: http://www4.ipdl.inpit.go.jp/Tokujitu/tjbansakuenk.ipdl.
Machine translation of part of Japanese Application No. 2000-286248, Publication No. 2001-148349, published May 29, 2001. “Selectively Growing Process for Semiconductor With Group III Nitride As Base”, A.K. Alexander et al., including English abstract page from Patent Abstracts of Japan. Available online from the Japanese Patent Office at: http://www4.ipdl.inpit.go.jp/Tokujitu/tjsogodbenk.ipdl.
Machine translation of part of Japanese Application No. 10-323317, Publication No. 2000-149765, published May 30, 2000, “Fluorescent Display Device”, K. Sashiro et al., including English abstract page from Patent Abstracts of Japan.Available online from the Japanese Patent Office at: http://www4.ipdl.inpit.go.jp/Tokujitu/tjsogodbenk.ipdl.
Hock, M. Ng et al., “Patterning GaN Microstructures by Polarity-Selective Chemical Etching” Japanese Journal of Appl. Phys., Japan, Dec. 1, 2003, vol. 42 (2003), pp. L1405-L1407.
D. J. Fu, et al, “GaN Pyramids Prepared by Photo-Assisted Chemical Etching,”Journal of the Korean Physical Society, Seoul, KR, vol. 42, (Feb. 2003), pp. S611-S613.
A. Kostopoulos, et al, “Atomic force microscopy analysis of Ga-face and N-face GaN grown on Al2O3(0001) by plasma-assisted molecular beam epitaxy,”Advanced Semiconductor Devices and Microsystems, 2000, 3rdIntern'l EuroConference, (Oct. 16, 2000), pp. 355-358.
T. Palacios, et al, “Wet Etching of GaN Grown by Molecular Beam Epitaxy on Si(111),”Semiconductor Science and Technology, IOP, Bristol, GB, vol. 15, No. 10, (Oct. 2000), pp. 996-1000.
T. Kozawa, et al, “Field emission study of gated GaN and Al0-1Ga0.9N/GaN pyramidal field emitter arrays,”Applied Physics Letters, American Inst. of Physics, NY, vol. 75, No. 21, (Nov. 22, 1999), pp. 3330-3332.
D. Huang, et al, “Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy,”Applied Physics Letters, American Inst. of Physics, NY, vol. 78, No. 26, (Jun. 25, 2001), pp. 4145-4147.
P. Visconti, et al, “Investigation of defects and surface polarity in GaN using hot wet etching together with microscopy and diffraction techniques,”Materials Science and Engineering B, Elsevier Sequoia, Lausanne, CH, vol. 93, No. 1-3, (May 30, 2002), pp. 229-233.
European Search Report, Appl. No. 06027111.1-2203, (Mar. 29, 2007).
Curtis, S., “Efficiency Gains Boost High-Power LED Performance,” Compounds Semiconductor, pp. 27-30, Dec. 2005.
T. Palacios, et al, “Wet etching of GaN grown by molecular beam epitaxy on Si(111)”,Semiconductor Science and Technology, 15 (Oct. 2000), pp. 996-1000.
Eyres, L.A. et al.,All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion, Applied Physics Letters, vol. 79, No. 7, Aug. 13, 2001, pp. 904-906.
Fejer, M.M. et al,Quasi-Phase-Matched Second Harmonic Generation: Tuning and Tolerances, IEEE Journal of Quantum Electronics, vol. 28, No. 11, Nov. 1992, pp. 2631-2654.
Stutzmann, M. et al.,Playing with Polarity, Physica Status Solidi B-Basic Research, vol. 228, No. 2, Nov. 2001, pp. 505-512.
Mileham, J.R., et al., “West chemical etching of AIN,” {American Institute of Physics}, Appl. Phys. Lett. 67(8), Aug. 21, 1995, pp. 1119-1121, USA.
Kozawa, T., et al., “Field emission study of gated GaN and Al0.1Ga0.9N/GaN pyramidal field emitter arrays,” {American Institute of Physics}, Appl. Phys. Lett., vol. 75, No. 21, Nov. 22, 1999, pp. 3330-3332, USA.
Huang, D., et al., “Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy,” {American Institute of Physics}, Applied Physics Letters, vol. 78, No. 26, Jun. 25, 2001, pp. 4145-4147, New York, USA.
Visconti, P., et al., “Investigation of defects and surface polarity in GaN using hot wet etching together with microscopy and diffraction techniques,” {Elsevier} Materials Science and Engineering, vol. B 93, 2002, pp. 229-233.
Ng, Hock M., et al., “Patterning GaN Microstructures by Polarity-Selective Chemical Etching,” {Japanese Society of Applied Physics}, Japanese Journal of Applied Physics, vol. 42, Dec. 1, 2003, pp. L1405-L1407.
European Search Report dated Sep. 8, 2004 for EP Appl. No. 04250979.4-2203.
Weyher, J.L., Muller, S., Grzegory, I., and Porowski, S., “Chemical Polishing of Bulk and Epitaxial GaN,” Journal of Crystal Growth, vol. 182 (1997), pp. 17-22.
Kozawa, T., Ohwaki, T., and Taga, Y., “Field Emission Study of Gated G

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Group III-nitride layers with patterned surfaces does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Group III-nitride layers with patterned surfaces, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Group III-nitride layers with patterned surfaces will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4316856

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.