Group III-nitride layers with patterned surfaces

Electric lamp and discharge devices – Discharge devices having a multipointed or serrated edge...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C313S336000, C313S351000

Reexamination Certificate

active

07468578

ABSTRACT:
A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer.

REFERENCES:
patent: 4987377 (1991-01-01), Gray et al.
patent: 5359256 (1994-10-01), Gray
patent: 5449435 (1995-09-01), Ageno et al.
patent: 5861707 (1999-01-01), Kumar
patent: 6825499 (2004-11-01), Nakajima et al.
patent: 7060542 (2006-06-01), Nakajima et al.
patent: 2002/0104999 (2002-08-01), Nakajima et al.
patent: 2003/0138983 (2003-07-01), Biwa et al.
patent: 2003/0168666 (2003-09-01), Okuyama et al.
patent: 2004/0129929 (2004-07-01), Okuyama et al.
patent: 2005/0145865 (2005-07-01), Okuyama et al.
Curtis, S., “Efficiency Gains Boost High-Power LED Performance,” Compounds Semiconductor, pp. 27-30, Dec. 2005.
D. J. Fu, et al, “GaN Pyramids Prepared by Photo-Assisted Chemical Etching,”Journal of the Jorean Physical Society, Seoul, KR, vol. 42, (Feb. 2003), pp. S611-S613.
A. Kostopoulos, et al, “Atomic force microscopy analysis of Ga-face and N-face GaN grown on Al2O3(0001) by plasma-assisted molecular beam epitaxy,”Advanced SEmiconductor Devices and Microsystems, 2000, 3rdIntern'l EuroConference, (Oct. 16, 2000), pp. 355-358.
T. Palacios, et al, “Wet Etching of GaN Grown by Molecular Beam Epitaxy on Si(111),”Semiconductor Science and Technology, IOP, Bristol, GB, vol. 15, No. 10, (Oct. 2000), pp. 996-1000.
T. Kozawa, et al, “Field emission study of gated GaN and Al0-1Ga0.9N/GaN pyramidal field emitter arrays,”Applied Physics Letters, American Inst. of Physics, NY, vol. 75, No. 21, (Feb. 22, 1999), pp. 3330-3332.
D. Huang, et al, “Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy,”Applied Physics Letters, American Inst. of Physics, NY, vol. 78, No. 26, (Jun. 25, 2001), pp. 4145-4147.
P. Visconti, et al, “Investigation of defects and surface polarity in GaN using hot wet etching together with microscopy and diffraction techniques,”Materials Science and Engineering B, Elsevier Sequoia, Lausanne, CH, vol. 93, No. 1-3, (May 30, 2002), pp. 229-233.
European Search Report, Appl. No. 06027111.1-2203, (Mar. 29, 2007).
T. Palacios, et al, “Wet etching of GaN grown by molecular beam epitaxy on Si(111)”,Semiconductor Science and Technology, 15 (Oct. 2000), pp. 996-1000.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Group III-nitride layers with patterned surfaces does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Group III-nitride layers with patterned surfaces, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Group III-nitride layers with patterned surfaces will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4051800

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.