Electric lamp and discharge devices – Discharge devices having a multipointed or serrated edge...
Reexamination Certificate
2006-05-27
2008-12-23
Williams, Joseph L (Department: 2889)
Electric lamp and discharge devices
Discharge devices having a multipointed or serrated edge...
C313S336000, C313S351000
Reexamination Certificate
active
07468578
ABSTRACT:
A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer.
REFERENCES:
patent: 4987377 (1991-01-01), Gray et al.
patent: 5359256 (1994-10-01), Gray
patent: 5449435 (1995-09-01), Ageno et al.
patent: 5861707 (1999-01-01), Kumar
patent: 6825499 (2004-11-01), Nakajima et al.
patent: 7060542 (2006-06-01), Nakajima et al.
patent: 2002/0104999 (2002-08-01), Nakajima et al.
patent: 2003/0138983 (2003-07-01), Biwa et al.
patent: 2003/0168666 (2003-09-01), Okuyama et al.
patent: 2004/0129929 (2004-07-01), Okuyama et al.
patent: 2005/0145865 (2005-07-01), Okuyama et al.
Curtis, S., “Efficiency Gains Boost High-Power LED Performance,” Compounds Semiconductor, pp. 27-30, Dec. 2005.
D. J. Fu, et al, “GaN Pyramids Prepared by Photo-Assisted Chemical Etching,”Journal of the Jorean Physical Society, Seoul, KR, vol. 42, (Feb. 2003), pp. S611-S613.
A. Kostopoulos, et al, “Atomic force microscopy analysis of Ga-face and N-face GaN grown on Al2O3(0001) by plasma-assisted molecular beam epitaxy,”Advanced SEmiconductor Devices and Microsystems, 2000, 3rdIntern'l EuroConference, (Oct. 16, 2000), pp. 355-358.
T. Palacios, et al, “Wet Etching of GaN Grown by Molecular Beam Epitaxy on Si(111),”Semiconductor Science and Technology, IOP, Bristol, GB, vol. 15, No. 10, (Oct. 2000), pp. 996-1000.
T. Kozawa, et al, “Field emission study of gated GaN and Al0-1Ga0.9N/GaN pyramidal field emitter arrays,”Applied Physics Letters, American Inst. of Physics, NY, vol. 75, No. 21, (Feb. 22, 1999), pp. 3330-3332.
D. Huang, et al, “Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy,”Applied Physics Letters, American Inst. of Physics, NY, vol. 78, No. 26, (Jun. 25, 2001), pp. 4145-4147.
P. Visconti, et al, “Investigation of defects and surface polarity in GaN using hot wet etching together with microscopy and diffraction techniques,”Materials Science and Engineering B, Elsevier Sequoia, Lausanne, CH, vol. 93, No. 1-3, (May 30, 2002), pp. 229-233.
European Search Report, Appl. No. 06027111.1-2203, (Mar. 29, 2007).
T. Palacios, et al, “Wet etching of GaN grown by molecular beam epitaxy on Si(111)”,Semiconductor Science and Technology, 15 (Oct. 2000), pp. 996-1000.
Chowdhury Aref
Ng Hock
Slusher Richart Elliott
Alcatel-Lucent USA Inc.
McCabe John F.
Williams Joseph L
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