Group III-nitride layers with patterned surfaces

Details Group III-nitride layers with patterned surfaces Group III-nitride layers with patterned surfaces

2006-01-17

2006-01-17

Williams, Joseph (Department: 2879)

Electric lamp or space discharge component or device manufacturi

Process

Electrode making

C445S051000, C438S047000, C257S190000

Reexamination Certificate

active

06986693

ABSTRACT:
A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer.

REFERENCES:
patent: 5141459 (1992-08-01), Zimmerman
patent: 5218771 (1993-06-01), Redford
patent: 5334908 (1994-08-01), Zimmerman
patent: 5341390 (1994-08-01), Yamada et al.
patent: 5345456 (1994-09-01), Dai et al.
patent: 5363021 (1994-11-01), MacDonald
patent: 5396361 (1995-03-01), Sasaki et al.
patent: 5420876 (1995-05-01), Lussier et al.
patent: 5440574 (1995-08-01), Sobottke et al.
patent: 5450429 (1995-09-01), Klemer et al.
patent: 5479431 (1995-12-01), Sobottke et al.
patent: 5628659 (1997-05-01), Xie et al.
patent: 5793791 (1998-08-01), Lasser et al.
patent: 5814156 (1998-09-01), Elliott et al.
patent: 5915164 (1999-06-01), Taskar et al.
patent: 5969467 (1999-10-01), Matsuno
patent: 6172325 (2001-01-01), Baird et al.
patent: 6218771 (2001-04-01), Berishev et al.
patent: 6448100 (2002-09-01), Schulte et al.
patent: 6809351 (2004-10-01), Kuramoto et al.
patent: 8-51248 (1996-02-01), None
patent: WO 92/02031 (1992-02-01), None
patent: WO 00/74107 (2000-12-01), None
patent: WO 2004/025733 (2004-03-01), None
Weyher, J.L., Muller, S., Grzegory, I., and Porowski, S., “Chemical Polishing of Bulk and Epitaxial GaN,” Journal of Crystal Growth, vol. 182 (1997), pp. 17-22, no month.
Kozawa, T., Ohwaki, T., and Taga, Y., “Field Emission Study of Gated GaN and Al0.1Ga0.9N/GaN Pyramidal Field Emitter Arrays,” Applied Physics Letters, vol. 75, No. 21, Nov. 22, 1999, pp. 3330-3332.
Sowers, A.T., Christman, J.A., Bremser, M.D., Ward, B.L., Davis, R.F., and Nemanich, R.J., “Thin Films of Aluminum Nitride and Aluminum Gallium Nitride for Cold Cathode Applications,” Applied Physics Letters, vol. 71, No. 16, Oct. 20, 1997, pp. 2289 -2291.
Seelmann-Eggebert, M., Weyher, J.L., Obloh, H., Zimmermann, H., Rar, A., and Porowski, S., “Polarity of(00.1)GaN Epilayers Grown on a(00.1)Sapphire,” Applied Physics Letters, vol. 71, No. 18, Nov. 3, 1997, pp. 2635-2637.
U.S. Appl. No. 10/259,051, filed Sep. 27, 2002, Chowdhury et al.
Eyres, L.A. et al.,All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion, Applied Physics Letters, vol. 79, No. 7, Aug. 13, 2001, pp. 904-906.
Fejer, M.M. et al,Quasi-Phase-Matched Second Harmonic Generation: Tuning and Tolerances, IEEE Journal of Quantum Electronics, vol. 28, No. 11, Nov. 1992, pp. 2631-2654.
Stutzmann, M. et al.,Playing with Polarity, Physica Status Solidi B-Basic Research, vol., 228, No. 2, Nov., 2001, pp. 505-512.
Mileham, J.R., et al., “West chemical etching of AIN,” {American Institute of Physics}, Appl. Phys. Lett. 67(8), Aug. 21, 1995, pp. 1119-1121, USA.
Kozawa, T., et al., “Field emission study of gated GaN and Al0.1Ga0.9N/GaN pyramidal field emitter arrays,” {American Institute of Physics}, Appl. Phys. Lett., vol. 75, No. 21, Nov. 22, 1999, pp. 3330-3332, USA.
Huang, D., et al., “Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy,” {American Institute of Physics}, Applied Physics Letters, vol. 78, No. 26, Jun. 25, 2001, pp. 4145-4147, New York, USA.
Visconti, P., et al., “Investigation of defects and surface polarity in GaN using hot wet etching together with microscopy and diffraction techniques,” {Elsevier} Materials Science and Engineering, vol. B 93, 2002, pp. 229-233, no month.
Ng, Hock M., et al., “Patterning GaN Microstructures by Polarity-Selective Chemical Etching,” {Japanese Society of Applied Physics}, Japanese Journal of Applied Physics, vol. 42, Dec. 1, 2003, pp. L1405-L1407.
European Search Report dated Sep. 8, 2004 for EP Appl. No. 04250979.4-2203.

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