Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Groove formation
Reexamination Certificate
2011-04-05
2011-04-05
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Groove formation
C438S097000, C438S458000, C438S693000, C438S745000, C257SE21211, C257SE21239, C257SE29002, C257SE29089
Reexamination Certificate
active
07919343
ABSTRACT:
A method for surface treatment of a group III nitride crystal includes the steps of lapping a surface of a group III nitride crystal using a hard abrasive grain with a Mohs hardness higher than 7, and abrasive-grain-free polishing the lapped surface of the group III nitride crystal using a polishing solution without containing abrasive grain, and the polishing solution without containing abrasive grain has a pH of not less than 1 and not more than 6, or not less than 8.5 and not more than 14. Accordingly, the method for surface treatment of a group III nitride crystal can be provided according to which hard abrasive grains remaining at the lapped crystal can be removed to reduce impurities at the crystal surface.
REFERENCES:
patent: 6399500 (2002-06-01), Porowski et al.
patent: 7416604 (2008-08-01), Ishibashi et al.
patent: 7662239 (2010-02-01), Ishibashi et al.
patent: 2007/0254401 (2007-11-01), Nishiura et al.
patent: 2008/0012025 (2008-01-01), Matsuoka et al.
patent: 2008/0057608 (2008-03-01), Ishibashi et al.
patent: 2010/0210089 (2010-08-01), Kasai et al.
patent: 2010/0224963 (2010-09-01), Ishibashi et al.
patent: 2003-165799 (2003-06-01), None
patent: 2003-183100 (2003-07-01), None
Irikura Masato
Ishibashi Keiji
Matsumoto Naoki
Drinker Biddle & Reath LLP
Lebentritt Michael S
Sumitomo Electric Industries Ltd.
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