Group III nitride compound semiconductor light-emitting element

Details Group III nitride compound semiconductor light-emitting element Group III nitride compound semiconductor light-emitting element

2007-01-02

2007-01-02

Jackson, Jerome (Department: 2815)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Packaging or treatment of packaged semiconductor

C257S098000, C438S047000

Reexamination Certificate

active

10162255

ABSTRACT:
In a flip chip type Group III nitride compound semiconductor light-emitting element, a surface of a substrate serving as a light-emitting surface is formed as a rough surface so that radiated light is scattered by the surface.

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Lee et al., “Efficiency improvement in light-emitting diodes based on geometrically deformed chips,” Proceedings of SPIE, Light-Emitting Diodes: Research, Manufacturing, and Applications III, 1999, vol. 3621, pp. 237-248.

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