Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2005-03-01
2005-03-01
Everhart, Caridad (Department: 2825)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S149000, C438S056000, C257S103000, C257S098000
Reexamination Certificate
active
06861281
ABSTRACT:
A reflective layer10is formed on a back surface11bof a sapphire substrate11. The reflective layer10includes an extension portion10awhich extends so as to cover almost all the sidewalls21aof a light-emitting device in the vicinity of the sapphire substrate. Thus, since adhesion between the reflective layer10and the substrate is greatly enhanced in the vicinity of the periphery of the surface on which the reflective layer is formed (the substrate back surface11b) by virtue of formation of the aforementioned extension portion10a, exfoliation of the reflective layer10from the substrate is prevented. Therefore, even when a process in which the reflective layer10is attached onto an adhesive sheet to thereby secure the light-emitting device100on the sheet is employed, generation of a defective product having an exfoliated reflective layer can be prevented. Thus, the quality and productivity of the semiconductor light-emitting device100including the reflective layer10provided for enhancing emission efficiency can be considerably improved. The sidewalls21amay have a short-circuit-prevention groove-like portion for preventing excessive extension of the reflective layer10.
REFERENCES:
patent: 4966862 (1990-10-01), Edmond
patent: 5185290 (1993-02-01), Aoyagi et al.
patent: 5798536 (1998-08-01), Tsutsui
patent: 5915194 (1999-06-01), Powell et al.
patent: 6121636 (2000-09-01), Morita et al.
patent: 49-149679 (1973-04-01), None
patent: 48-95181 (1973-12-01), None
patent: 51-137393 (1976-11-01), None
patent: 55-34646 (1978-08-01), None
patent: 58-33882 (1983-02-01), None
patent: 1-316459 (1989-12-01), None
patent: 5-110206 (1993-04-01), None
patent: 5-129658 (1993-05-01), None
patent: 8-102549 (1996-04-01), None
patent: 11-126924 (1999-05-01), None
patent: 11-126925 (1999-05-01), None
patent: 11-145519 (1999-05-01), None
patent: 11-261112 (1999-09-01), None
Nagasaka Naohisa
Uemura Toshiya
Everhart Caridad
McGinn & Gibb PLLC
Toyoda Gosei Co,., Ltd.
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