Group III nitride compound semiconductor laser diodes

Details Group III nitride compound semiconductor laser diodes Group III nitride compound semiconductor laser diodes

1997-08-08

1999-03-30

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 44, H01S 319

Patent

active

058898069

ABSTRACT:
A laser diode using Group III nitride compound semiconductor consists of In.sub.0.2 Ga.sub.0.8 N/GaN SQW active layer 5, a pair of GaN guide layers 41 and 62, sandwiching the active layer with wider forbidden band than the active layer, and a pair of Al.sub.0.08 Ga.sub.0.92 N cladding layer 4 and 71, sandwiching a pair of the guide layers, and the LD confines carriers and light separately. Al.sub.0.15 Ga.sub.0.75 N stopper layers 41 and 62 with wider forbidden band than the guide layers are formed in some portion of each of the guide layers 41 and 62 in parallel to the active layer. As a result, carriers are confined in the active layer and the laser output of the LD is improved.

REFERENCES:
patent: 5432808 (1995-07-01), Hatano et al.
patent: 5530267 (1996-06-01), Brandle, Jr. et al.
patent: 5592501 (1997-01-01), Edmond et al.
patent: 5777350 (1998-07-01), Nakamura et al.
Nakamura et al: "InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets", Japanese Journal of Applied Physics, vol. 35 (1996) pp. L217-220.

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