Coherent light generators – Particular active media – Semiconductor
Patent
1995-04-19
1997-02-18
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
H01S 319
Patent
active
056047630
ABSTRACT:
An improved laser diode is made of a gallium nitride compound semiconductor ((Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N; 0.ltoreq.x.ltoreq.1; 0.ltoreq.x.ltoreq.1) with a double heterojunction structure having the active layer held between layers having a greater band gap. The laser diode comprises mirror surfaces formed by cleaving the multi-layered coating and the sapphire substrate in directions parallel to <0001> (c axis) of the sapphire substrate. The intermediate zinc oxide (ZnO) layer is selectively removed by wet etching with a ZnO-selective liquid etchant so as to form gaps between the sapphire substrate and the bottom-most sub-layer of the semiconductor laser element layer. The semiconductor laser element layer is cleaved with the aid of the gaps, and the resulting planes of cleavage are used as the mirror surfaces of the laser cavity.
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patent: 5306662 (1994-04-01), Nakamura et al.
S. T. Kim, H. Amano, I. Akasaki; N, Koide; Optical Gain of Optically Pumpted Al.sup.0.1 Ga .sup.0.9 N/GaN Double Heterostructure at Room Temperature; Applied Physics Letters 64; Mar. 21, 1994, No. 12, pp. 1535-1536.
Takashi Matsuoka, Toru Sasaki, Akinori Katsui; Growth and Properties of A Wide-Gap Semiconductor InGaN; Optoelectronics Devices and Technologies 5 (1990) Jun., No. 1, pp. 53-64.
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Takashi Matsuoka; Akira Ohki; Tetsuichiro Ohno, Yoshihiro Kawaguchi; Comparison of GaN- And ZnSe-Based Materials For Light Emitters; 2300 Journal of Crystal Growth 138 (1994) Apr. 11, Nos. 1/4, pp. 727-736.
Akasaki Isamu
Amano Hiroshi
Kato Hisaki
Koide Norikatsu
Koike Masayoshi
Akasaki Isamu
Amano Hiroshi
Davie James W.
Research Development of Japan
Toyoda Gosei Co,., Ltd.
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