Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2005-11-22
2005-11-22
Wilson, Christian (Department: 2891)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S479000, C438S481000
Reexamination Certificate
active
06967122
ABSTRACT:
A sapphire substrate1is etched so that each trench has a width of 10 μm and a depth of 10 μm were formed at 10 μm of intervals in a stripe pattern. Next, an AlN buffer layer2having a thickness of approximately 40 nm is formed mainly on the upper surface and the bottom surface of the trenches of the substrate1. Then a GaN layer3is formed through vertical and lateral epitaxial growth. At this time, lateral epitaxial growth of the buffer layer21, which was mainly formed on the upper surface of the trenches, filled the trenches and thus establishing a flat top surface. The portions of the GaN layer3formed above the top surfaces of the mesas having a depth of 10 μm exhibited significant suppression of threading dislocation in contrast to the portions formed above the bottoms of the trenches.
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McGinn IP Law Group PLLC
Toyoda Gosei Co,., Ltd.
Wilson Christian
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