Chemistry of inorganic compounds – Halogen or compound thereof – Binary fluorine containing compound
Reexamination Certificate
2008-04-01
2009-08-04
Langel, Wayne (Department: 1793)
Chemistry of inorganic compounds
Halogen or compound thereof
Binary fluorine containing compound
Reexamination Certificate
active
07569206
ABSTRACT:
The present invention provides compositions and a novel high-yielding process for preparing high purity Group III nitrides. The process involves heating a Group III metal and a catalytic amount of a metal wetting agent in the presence of a nitrogen source. Group III metals can be stoichiometrically converted into high purity Group III nitride powders in a short period of time. The process can provide multi-gram quantities of high purity Group III nitrides in relatively short reaction times. Detailed characterizations of GaN powder were performed and are reported herein, including morphology and structure by SEM and XRD, optical properties by cathodoluminescence (CL), and Raman spectra to determine the quality of the GaN particles. The purity of GaN powder was found to be greater than 99.9% pure, as analyzed by Glow Discharge Mass Spectrometry (GDMS). Green, yellow, and red light emission can be obtained from doped GaN powders.
REFERENCES:
patent: 3829556 (1974-08-01), Logan et al.
patent: 4144116 (1979-03-01), Jacob et al.
patent: 6096282 (2000-08-01), Kaner et al.
patent: 6120748 (2000-09-01), Kaner et al.
patent: 6139629 (2000-10-01), Kisielowski et al.
patent: 6177057 (2001-01-01), Purdy
patent: 6270569 (2001-08-01), Shibata et al.
patent: 6379472 (2002-04-01), Kisielowski et al.
patent: 6406677 (2002-06-01), Carter et al.
patent: 7255844 (2007-08-01), Ponce et al.
patent: 7381391 (2008-06-01), Spencer et al.
patent: 2003/0086856 (2003-05-01), D'Evelyn et al.
patent: 2003/0226497 (2003-12-01), Hara
patent: 2007/0248526 (2007-10-01), Spencer et al.
patent: WO-2006/010075 (2006-01-01), None
“U.S. Appl. No. 11/650,569, Notice of Allowance mailed Jan. 24, 2008”, 7 pgs.
“International Application No. PCT/US05/24427, International Search Report mailed Dec. 7, 2005”, 3 pgs.
“International Application No. PCT/US05/24427, Written Opinion mailed Dec. 7, 2005”, 6 pgs.
Addamiano, A., “On the Preparation of the Nitrides of Aluminum and Gallium”,Journal of the Electrochemical Society, 108(11), (1961),p. 1072.
Akasaki, I., et al., “The evolution of group III nitride semiconductors. Seeking blue light emission”,Materials Science&Engineering B(Solid-State Materials for Advanced Technology), B74(1-3), (May 1, 2000),101-6.
Baba, K., et al., “Synthesis and properties of ultrafine AIN powder by rf plasma”,Applied Physics Letters, 54(23), (1989),2309-2311.
Balkas, C. M., et al., “Synthesis Routes and Characterization of High-Purity, Single-Phase Gallium Nitride Powders”,J. Am. Ceram. Soc., 79, (1996),2309-2312.
Birkhahn, R H., et al., “Optical and Structural Properties or Er3+-Doped GaN Grown by MBE”,MRS Internet J. Nitride Semicond. Res. 4S1, G3.80, (1999), 6 pages.
Cao, X. A., et al., “Advanced Processing of GaN for Electronic Devices”,Critical Reviews in Solid State and Materials Sciences, 25(4), (2000),279-390.
Haffouz, S., et al., “Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (1 1 1) substrates”,Journal of Crystal Growth, 248, (2003), 568-572.
Johnson, W. C., et al., “Nitrogen Compounds of Gallium. III. Gallie Nitride”,The Journal of Physical Chemistry, 36(10), (1932), 2651-2654.
Kim, K.-H. , et al., “Ultrafine Aluminium Nitride Powder Produced by Plasma-Assisted Chemical Vapour Deposition of Trimethylalumium”,Journal of Materials Science, 27, (1992), 2580-2588.
Lorenz, M. R., et al., “Preparation, Stability, and Luminescence of Gallium Nitride”,Journal of the Electrochemical Society, 109(1), (1962), 24-26.
Lozykowski, H J., et al., “Visible cathodoluminescence of GaN doped with Dy, Er, and Tm”,Applied Physics Letters, 74(8), (Feb. 22, 1999),1129-1131.
Nahm, K. S., et al., “The Catalytic Growth of GaN Powders”,Proceedings of International Workshop on Nitride Semiconductors, (The Institute of Pure and Applied Physics (IPAP) Conference Series 1),(2000), 30-33.
Shibata, M. , et al., “Synthesis of Gallium Nitride by Ammonia Injection into Gallium Melt”,Journal of Crystal Growth, 196, (1999), 47-52.
Steckl, A J., et al., “Visible emission from Er-doped GaN grown by solid source molecular beam epitaxy”,Applied Physics Letters, 73(12), (Sep. 21, 1998), 1700-1702.
Vaidhyanathan, B., et al., “Novel Synthesis of Nitride Powders by Microwave-Assisted Combustion”,J. Mater. Res., 15(4), (2000), 974-981.
Balkas, C. M., et al., “Synthesis and Characterization of High Purity, Single Phase GaN Powder”,Powder Diffr., 10(4), (1995),266-268.
Cahn, J. W., “Critical Point Wetting”,The Journal of Chemical Physics, 66(8), (1977),3667-3672.
Chatain, D. , et al., “Experimental Evidence for a Wetting Transition in Liquid Ga-Pb Alloys”,Surface Science, 345, (1996),85-90.
Davydov, V. Y., et al., “Phonon Dispersion and Raman Scattering in Hexagonal GaN and AIN”,Physical Review B, 58(19), (1998),12899-12907.
Di Lello, B. C., et al., “Synthesis and Characterization of GaN Using Gas-Solid Reactions”,Materials Science and Engineering, B93, (2002),219-223.
Flom, E. B., et al., “In-Plane Structure of the Liquid-Vapor Interface of an Alloy: A Grazing Incidence X-ray Diffraction Study of Bismuth: Gallium”,Science, 260, (1993),332-335.
Garcia, R., et al., “Synthesis, Structure and Luminescence of High Brightness Gallium Nitride Powder”,Materials Research Society Symposium Proceedings, vol. 798, (2004), Y10.75.1-Y10.75-6.
Hara, K., et al., “High-Rate Particle Growth Using GaCI and NH3as Sources in Two-Stage Vapor-Phase Method for Synthesis of GaN Powders”,Japanese Journal of Applied Physics, vol. 41, (2002), L1351-1353.
Konenkova, E. V., et al., “Raman Spectroscopy of GaN Nucleation and Free-Standing Layers Grown by Hydride Vapor Phase Epitaxy on Oxidized Silicon”,Applied Physics Letters, 83(4), (2003), 629-631.
Kumar, M. S., et al., “Structural Studies on Synthesised Gallium Nitride”,Journal of Crystal Growth, 211, (2000), 184-188.
Pichugin, I. G., et al., “Preparation of Gallium Nitride”,Inorganic Materials, 6, (1972), 1732-1734.
Ponce, F. A., et al., “Direct Imaging of Impurity-Induced Raman Scattering in GaN”,Applied Physics Letters, 69(18), (1996), 2650-2652.
Qui, Y. , et al., “Novel Synthesis of Nanocrystalline Gallium Nitride Powder from Gallium(III)-Urea Complex”,Chemistry Letters, 32(8), (2003), 774-775.
Skromme, B. J., et al., “Optical Spectroscopy of Bulk GaN Crystals Grown from a Na—Ga Melt”,Applied Physics Letters, 81(20), (2002), 3765-3767.
Tostmann, H., et al., “Microscopic Structure of the Wetting Film at the Surface of Liquid Ga—Bi Alloys”,Physical Review Letters, 84(19), (2000), 4385-4388.
DiSalvo Francis J.
Spencer Michael G.
Wu Huaqiang
Cornell Research Foundation Inc.
Haukaas Michael H.
Langel Wayne
Schwegman Lundberg & Woessner, P.A.
LandOfFree
Group III nitride compositions does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Group III nitride compositions, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Group III nitride compositions will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4131497