Stock material or miscellaneous articles – Composite – Of inorganic material
Reexamination Certificate
2006-08-29
2006-08-29
McNeil, Jennifer (Department: 1775)
Stock material or miscellaneous articles
Composite
Of inorganic material
C428S336000, C117S952000, C117S953000
Reexamination Certificate
active
07097920
ABSTRACT:
To provide a semiconductor substrate of a group III nitride with a little warp, this invention provides a process comprising such steps of:epitaxial-growing a GaN layer33with a GaN low temperature grown buffer layer32upon a sapphire substrate31;removing the sapphire substrate31, the GaN buffer layer32and a small portion of the GaN layer33from the substrate taken out of a growth reactor to obtain a self-supporting GaN substrate35; and after that,heat-treating the GaN substrate35by putting it into an electric furnace under the NH3atmosphere at 1200° C. for 24 hours; which leads to a marked reduction of the warp of the self-supporting GaN substrate35such that dislocation densities of its obverse and reverse surface are 4×107cm−2and 8×105cm−2, and thereby such a low ratio of dislocation densities of 50 is well-controlled.
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Oshima Yuichi
Shibata Masatomo
Usui Akira
Hayes & Soloway P.C.
Hitachi Cable Ltd.
McNeil Jennifer
NEC Corporation
Speer Timothy M.
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