Group-III nitride based laser diode and method for...

Details Group-III nitride based laser diode and method for... Group-III nitride based laser diode and method for...

2010-09-13

2011-11-01

Park, Kinam (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045012, C372S043010, C428S025000, C428S474400, C428S670000

Reexamination Certificate

active

08050304

ABSTRACT:
A laser diode comprising a first separate confinement heterostructure and an active region on the first separate confinement heterostructure. A second separate confinement heterostructure is on the active region and one or more epitaxial layers is on the second separate confinement heterostructure. A ridge is formed in the epitaxial layers with a first mesa around the ridge. The first mesa is 0.1 to 0.2 microns above the second confinement heterostructure.

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