Group III nitride based flip-chip integrated circuit and...

Details Group III nitride based flip-chip integrated circuit and... Group III nitride based flip-chip integrated circuit and...

2008-04-08

2008-04-08

Nguyen, Cuong (Department: 2811)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Having diverse electrical device

C438S027000, C438S022000

Reexamination Certificate

active

10916819

ABSTRACT:
A flip-chip integrated circuit and method for fabricating the integrated circuit are disclosed. A method according to the invention comprises forming a plurality of active semiconductor devices on a wafer and separating the active semiconductor devices. Passive components and interconnections are formed on a surface of a circuit substrate and at least one conductive via is formed through the circuit substrate. At least one of the active semiconductor devices is flip-chip mounted on the circuit substrate with at least one of the bonding pads in electrical contact with one of the conductive vias. A flip-chip integrated circuit according to the present invention comprises a circuit substrate having passive components and interconnections on one surface and can have a conductive via through it. An active semiconductor device is flip-chip mounted on the circuit substrate, one of the at least one vias is in contact with one of the at least one the device's terminals. The present invention is particularly applicable to Group III nitride based active semiconductor devices grown on SiC substrates. The passive components and interconnects can then be formed on a lower cost, higher diameter wafer made of GaAs or Si. After separation, the Group III devices can be flip-chip mounted on the GaAs or Si substrate.

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